Modeling carrier-envelope phase effects on frustrated tunnel ionization

The fact that an electron can tunnel out of the potential well of its parent atom or molecule in the presence of a strong laser field is the basis of a number of strong-field phenomena such as above threshold ionization, and nonsequential multiple ionization. In both of those cases the parent is left in an ionized state. However, there is a chance that after the electron has tunneled it will return to a bound state -- a process known as frustrated tunnel ionization (FTI)~[Nubbemeyer, T., et al. Phys. Rev. Lett. 101(23): 233001 (2008)]. Here we present calculations of few-cycle laser pulse FTI yield for argon as a function of carrier-envelope phase using the rescattering model~[P.B. Corkum, Phys. Rev. Lett. 71, 1994 (1993)] with the addition of a coulomb potential term when dealing with the ``free'' electron. We will contrast the use of different coulomb potentials and compare these calculations to some of our recently obtained experimental results.