Noise Characterization of an Injection-locked Ti:Sapphire Laser

POSTER

Abstract

We report amplitude noise and laser linewidth measurements in an injection-locked ti:sapphire laser system. A low power diode laser is amplified to 1.6 W at 846 nm. Amplitude noise is measured using a high-speed photodiode. Frequency noise is measured relative to a low-noise commercial ti:sapphire laser using an offset lock and heterodyne technique. Under optimal conditions the relative rms amplitude noise is 1\%. The linewidth of the injection-locked laser is 360 kHz.

*Funded in part by the National Science Foundation (Grant No. PHY-0969856)

Authors

  • Daniel Thrasher

    • Brigham Young University

  • Matt Burbidge

  • Miriam Conde

  • Scott Bergeson

    • Brigham Young University