Ge and Ge-rich Group IV Alloys on Si for Photonic Device Applications

POSTER

Abstract

The application of silicon photonic technologies to optical telecommunications requires the development of near-infrared detectors monolithically integrated to the Si platform. Recently, new low-temperature CVD techniques have been developed for growth of high-quality epitaxial films of Ge, Ge$_{1-y}$Sn$_{y}$, and Si$_{x}$Ge$_{1-x-y}$Sn$_{y}$ directly on Si. In this poster, we present details on the growth of these films, optimization of processes for the fabrication of photonic devices, and results from some prototype p-i-n heterostructure devices.

Authors

  • Jay Mathews

    • Department of Physics, Arizona State University, Tempe, AZ, 85287-1504, USA

  • Jose Menendez

    • Department of Physics, Arizona State University, Tempe, AZ, 85287-1504, USA

  • Vijay D'Costa

    • Department of Physics, Arizona State University, Tempe, AZ, 85287-1504, USA

  • Shui-Qing Yu

    • Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA

  • Radek Roucka

    • Department of Chemistry and Biochemistry, Arizona State University, Tempe, AZ, 85287- 1604, USA

  • Junqi Xie

    • Department of Chemistry and Biochemistry, Arizona State University, Tempe, AZ, 85287- 1604, USA

  • Yanyan Fang

    • Department of Chemistry and Biochemistry, Arizona State University, Tempe, AZ, 85287- 1604, USA

  • John Kouvetakis

    • Department of Chemistry and Biochemistry, Arizona State University, Tempe, AZ, 85287- 1604, USA